650nm pulsation red laser diode description the SLD1134VL is a pulsation red laser diode designed for dvd systems. features low noise standard package ( 5.6mm) application dvd structure algainp quantum well-structure laser diode pin photo diode for optical power output monitor recommended optical power output 4mw absolute maximum ratings (tc = 25?) optical power output pomax 5 mw reverse voltage v r ld 2 v pd 20 v operating temperature topr ?0 to +70 ? storage temperature tstg ?0 to +85 ? ?1 e98y11a18-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. SLD1134VL m-274 pin configuration 1 2 3 common ld pd 2 bottom view 1 3 1. ld anode 2. pd anode 3. common connection diagram
2 SLD1134VL electrical and optical characteristics tc: case temperature unit max. typ. min. conditions symbol ith iop1 iop2 ? 1 vop p ? // ? x, ? y, ? z ? // ?? d a s imon item 640 25 7 0.15 0.05 65 75 2.3 655 35 8.5 0.4 10 0.1 perpendicular parallel position angle threshold current operating current operating voltage wavelength differential efficiency astigmatism monitor current 80 90 120 2.8 660 40 12 80 2 3 0.7 0.25 ma ma ma v nm degree degree m degree degree mw/ma m ma p o = 4mw p o = 4mw p o = 4mw p o = 4mw p o = 4mw p o = 4mw p o = 4mw p o = 4mw vr = 5v positional accuracy radiation angle ? 1 tc = 70 c
3 SLD1134VL example of representative characteristics threshold current vs. temperature characteristics tc case temperature [ c] 020406080 20 020406080 20 200 100 10 ith threshold current [ma] optical power output vs. forward current characteristics optical power output vs. monitor current characteristics i f forward current [ma] 020 imon monitor current [ma] 40 0 0.2 60 80 100 5 tc = 0 imon 25 60 70 c tc = 0 25 60 70 c 4 3 2 1 0 po optical output [mw] monitor current vs. temperature characteristics tc case temperature [ c] 0 0.1 0.2 imon monitor current [ma] po = 4mw 40 20 0 20 40 far field pattern (ffp) angle [degree] 0 relative radiant intensity po = 4mw tc = 25 c ? //
4 SLD1134VL 645 650 655 660 p wavelength [nm] temperature dependence of spectrum po = 4mw tc = 70 c tc = 60 c tc = 25 c tc = 0 c relative radiant intensity 665 670 675
5 SLD1134VL 645 650 655 660 p wavelength [nm] power output dependence of spectrum tc = 25 c po = 5mw po = 4mw po = 1mw relative radiant intensity 665 670 675
6 SLD1134VL notes on operation care should be taken for the following points when using this product. (1) this product corresponds to a class 3b product under iec60825-1 and jis standard c6802 "laser product emission safety standards". (2) eye protection against laser beams take care not to allow laser beams to enter your eyes under any circumstances. for observing laser beams, always use safety goggles that block laser beams. usage of ir scopes, ir cameras and fluorescent plates is also recommended for monitoring laser beams safely. (3) gallium arsenide this product uses gallium arsenide (gaas). this is not a problem for normal use, but gaas vapors may be potentially hazardous to the human body. therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. in addition, the following disposal methods are recommended when disposing of this product. 1. engaging the services of a contractor certified in the collection, transport and intermediate treatment of items containing arsenic. 2. managing the product through to final disposal as specially managed industrial waste which is handled separately from general industrial waste and household waste. (4) prevention of surge current and electrostatic discharge laser diodes are most sensitive to electrostatic discharge among semiconductors. when a large current is passed through the laser diode for even an extremely short time, the strong light emitted from the laser diode promotes deterioration and then destruction of the laser diode. therefore, note that surge current should not flow to the laser diode driving circuit from switches and others. also, if the laser diode is handled carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body. therefore, be extremely careful about overcurrent and electrostatic discharge. (5) use for special applications this product is not designed or manufactured for use in equipment used under circumstances where failure may pose a risk to life and limb, or result in significant material damage, etc. consult your sony sales representative when investigating use for medical, vehicle, nuclear power control or other special applications. also, use the power supply that was designed not to exceed the optical power output specified at the absolute maximum ratings. laser radiation avoid direct exposure to beam laser diode laser diode avoid exposure laser radiation is emitted from this aperture. this product complies with 21 cfr part 1040.10 and 1040.11 sony corporation 6-7-35 kitashinagawa, shinagawa-ku,tokyo 141-0001 japan maximum output 30 mw wavelength 600 - 950 nm class iii b laser product
7 SLD1134VL package outline unit: mm sony code eiaj code jedec code reference slot 1.0 0.5 90 ? 0.4 5.6 0.025 0 4.4 max 3.7 max 1.0 min 0.5 min window glass reference plane ld chip & photo diode 0.25 2.6 max ? 1.26 1.2 0.1 6.5 231 3 0.45 pcd 2.0 ? optical distance = 1.35 0.08 1 2 3 m-274 package mass 0.3g m-274 sony corporation
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